Electron trap transformation under positive-bias temperature stressing

Electron trap transformation under positive-bias temperature stressing

Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5....

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Bibliographic Details
Main Authors: Gao, Yuan, Ang, Diing Shenp, Bersuker, G., Young, C. D.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/96942
http://hdl.handle.net/10220/9977

Internet

https://hdl.handle.net/10356/96942
http://hdl.handle.net/10220/9977

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