Electron trap transformation under positive-bias temperature stressing
Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5....
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/96942 http://hdl.handle.net/10220/9977 |
| _version_ | 1811681144861622272 |
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| author | Gao, Yuan Ang, Diing Shenp Bersuker, G. Young, C. D. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Gao, Yuan Ang, Diing Shenp Bersuker, G. Young, C. D. |
| author_sort | Gao, Yuan |
| collection | NTU |
| description | Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5.5 MV/cm), independent of the number of times the transistor is stressed and relaxed, and it progressively decreases with the number of stress/relaxation cycles at a higher oxide stress field (~7 MV/cm). Analysis shows that the decrease is due to a portion of the electron trap states being transformed into deeper levels, thereby increasing the emission time of the trapped electrons. However, unlike hole detrapping, the decrease in electron detrapping is not accompanied by a correlated increase in the stress-induced leakage current, and it can be reversed with a moderate negative gate voltage. These differences from NBTI suggest that distinct defects are active under PBTI. |
| first_indexed | 2024-10-01T03:36:17Z |
| format | Journal Article |
| id | ntu-10356/96942 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:36:17Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/969422020-03-07T14:02:44Z Electron trap transformation under positive-bias temperature stressing Gao, Yuan Ang, Diing Shenp Bersuker, G. Young, C. D. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5.5 MV/cm), independent of the number of times the transistor is stressed and relaxed, and it progressively decreases with the number of stress/relaxation cycles at a higher oxide stress field (~7 MV/cm). Analysis shows that the decrease is due to a portion of the electron trap states being transformed into deeper levels, thereby increasing the emission time of the trapped electrons. However, unlike hole detrapping, the decrease in electron detrapping is not accompanied by a correlated increase in the stress-induced leakage current, and it can be reversed with a moderate negative gate voltage. These differences from NBTI suggest that distinct defects are active under PBTI. Accepted version 2013-05-23T04:41:27Z 2019-12-06T19:36:56Z 2013-05-23T04:41:27Z 2019-12-06T19:36:56Z 2013 2013 Journal Article Gao, Y., Ang, D. S., Bersuker, G., & Young, C. D. (2013). Electron Trap Transformation under Positive-Bias Temperature Stressing. IEEE Electron Device Letters, 34(3), 351-353. https://hdl.handle.net/10356/96942 http://hdl.handle.net/10220/9977 10.1109/LED.2013.2242041 172593 en IEEE electron device letters © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2013.2242041]. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Gao, Yuan Ang, Diing Shenp Bersuker, G. Young, C. D. Electron trap transformation under positive-bias temperature stressing |
| title | Electron trap transformation under positive-bias temperature stressing |
| title_full | Electron trap transformation under positive-bias temperature stressing |
| title_fullStr | Electron trap transformation under positive-bias temperature stressing |
| title_full_unstemmed | Electron trap transformation under positive-bias temperature stressing |
| title_short | Electron trap transformation under positive-bias temperature stressing |
| title_sort | electron trap transformation under positive bias temperature stressing |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/96942 http://hdl.handle.net/10220/9977 |
| work_keys_str_mv | AT gaoyuan electrontraptransformationunderpositivebiastemperaturestressing AT angdiingshenp electrontraptransformationunderpositivebiastemperaturestressing AT bersukerg electrontraptransformationunderpositivebiastemperaturestressing AT youngcd electrontraptransformationunderpositivebiastemperaturestressing |