Non-volatile 3D stacking RRAM-based FPGA

We demonstrates a novel Field-Programmable Gate Array (FPGA) structure based on Resistive Random Access Memory (RRAM) system. RRAM is a non-volatile memory device which is compatible to CMOS Back End of Line (BEOL) process with only 4F2 area per cell. We use a 1R system memory for logic element, Loo...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: Chen, Yi-Chung, Wang, Wenhua, Li, Hai, Zhang, Wei
Rannpháirtithe: School of Computer Engineering
Formáid: Conference Paper
Teanga:English
Foilsithe / Cruthaithe: 2013
Ábhair:
Rochtain ar líne:https://hdl.handle.net/10356/96987
http://hdl.handle.net/10220/13024