Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure
A Ge/GeO2 core/shell nanostructure embedded in an Al2O3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal–insulator–semiconductor (MIS) capacitor for Ge/GeO2 core/shell nanoparticles compared to Ge nanoparticles only, which is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97279 http://hdl.handle.net/10220/10538 |