Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy
In this study, we investigate the effect of the molecular beam epitaxial growth temperature on the epilayer tilt and the strain relaxation in the InAlAs M-buffer layer when the In composition is varied linearly from 6 to 57% followed by an inverse grading to 52% where InAlAs is lattice-matched to In...
| Main Authors: | , , , , , |
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| Drugi avtorji: | |
| Format: | Journal Article |
| Jezik: | English |
| Izdano: |
2013
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| Teme: | |
| Online dostop: | https://hdl.handle.net/10356/97329 http://hdl.handle.net/10220/11494 |