Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device
We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide...
| Auteurs principaux: | , , , |
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| Autres auteurs: | |
| Format: | Journal Article |
| Langue: | English |
| Publié: |
2013
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| Accès en ligne: | https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 |