Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device
We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 |
| _version_ | 1811694519532388352 |
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| author | Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| author_sort | Yuan, C. L. |
| collection | NTU |
| description | We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time. |
| first_indexed | 2024-10-01T07:08:52Z |
| format | Journal Article |
| id | ntu-10356/97344 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:08:52Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/973442020-06-01T10:13:36Z Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See School of Materials Science & Engineering We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time. 2013-06-24T07:04:01Z 2019-12-06T19:41:41Z 2013-06-24T07:04:01Z 2019-12-06T19:41:41Z 2006 2006 Journal Article Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device. Nanotechnology, 17(13), 3175-3177. 0957-4484 https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 10.1088/0957-4484/17/13/016 en Nanotechnology © 2006 IOP Publishing Ltd. |
| spellingShingle | Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title | Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_full | Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_fullStr | Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_full_unstemmed | Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_short | Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_sort | formation of sio2 nanocrystals in lu2o3 high k dielectric by pulsed laser ablation and application in memory device |
| url | https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 |
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