Effect of Ti alloying in nickel silicide formation

Effect of Ti alloying in nickel silicide formation

In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant N...

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Bibliographic Details
Main Authors: Setiawan, Y., Tan, C. W., Lee, Pooi See, Pey, Kin Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/97441
http://hdl.handle.net/10220/10500

Internet

https://hdl.handle.net/10356/97441
http://hdl.handle.net/10220/10500

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