Effect of Ti alloying in nickel silicide formation
In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant N...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97441 http://hdl.handle.net/10220/10500 |
| _version_ | 1826118697500016640 |
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| author | Setiawan, Y. Tan, C. W. Lee, Pooi See Pey, Kin Leong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Setiawan, Y. Tan, C. W. Lee, Pooi See Pey, Kin Leong |
| author_sort | Setiawan, Y. |
| collection | NTU |
| description | In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C. |
| first_indexed | 2024-10-01T04:47:42Z |
| format | Journal Article |
| id | ntu-10356/97441 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:47:42Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/974412020-06-01T10:01:53Z Effect of Ti alloying in nickel silicide formation Setiawan, Y. Tan, C. W. Lee, Pooi See Pey, Kin Leong School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C. 2013-06-20T01:21:30Z 2019-12-06T19:42:48Z 2013-06-20T01:21:30Z 2019-12-06T19:42:48Z 2005 2005 Journal Article Setiawan, Y., Lee, P. S., Tan, C. W., & Pey, K. L. (2006). Effect of Ti alloying in nickel silicide formation. Thin Solid Films, 504(1-2), 153-156. 0040-6090 https://hdl.handle.net/10356/97441 http://hdl.handle.net/10220/10500 10.1016/j.tsf.2005.09.066 en Thin solid films © 2005 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Setiawan, Y. Tan, C. W. Lee, Pooi See Pey, Kin Leong Effect of Ti alloying in nickel silicide formation |
| title | Effect of Ti alloying in nickel silicide formation |
| title_full | Effect of Ti alloying in nickel silicide formation |
| title_fullStr | Effect of Ti alloying in nickel silicide formation |
| title_full_unstemmed | Effect of Ti alloying in nickel silicide formation |
| title_short | Effect of Ti alloying in nickel silicide formation |
| title_sort | effect of ti alloying in nickel silicide formation |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/97441 http://hdl.handle.net/10220/10500 |
| work_keys_str_mv | AT setiawany effectoftialloyinginnickelsilicideformation AT tancw effectoftialloyinginnickelsilicideformation AT leepooisee effectoftialloyinginnickelsilicideformation AT peykinleong effectoftialloyinginnickelsilicideformation |