Thermal effects on LPCVD amorphous silicon

Thermal effects on LPCVD amorphous silicon

The effects of thermal annealing on amorphous silicon deposited using low-pressure chemical vapour deposition (LPCVD) are presented in this paper. The amorphous silicon film is being subjected to different annealing conditions ranging from 600 to 900 °C for a varying period of 30 to 90 min holding t...

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Bibliographic Details
Main Authors: Lai, M. Z., Lee, Pooi See, Agarwal, Ajay
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/97442
http://hdl.handle.net/10220/10499

Internet

https://hdl.handle.net/10356/97442
http://hdl.handle.net/10220/10499

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