Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate

Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate

Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, result...

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Bibliographic Details
Main Authors: Li, Y. S., Lee, Pooi See, Pey, Kin Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/97519
http://hdl.handle.net/10220/10503

Internet

https://hdl.handle.net/10356/97519
http://hdl.handle.net/10220/10503

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