Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate
Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, result...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97519 http://hdl.handle.net/10220/10503 |
| _version_ | 1811690288259792896 |
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| author | Li, Y. S. Lee, Pooi See Pey, Kin Leong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Y. S. Lee, Pooi See Pey, Kin Leong |
| author_sort | Li, Y. S. |
| collection | NTU |
| description | Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films. |
| first_indexed | 2024-10-01T06:01:37Z |
| format | Journal Article |
| id | ntu-10356/97519 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:01:37Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/975192020-06-01T10:01:54Z Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate Li, Y. S. Lee, Pooi See Pey, Kin Leong School of Electrical and Electronic Engineering School of Materials Science & Engineering Singapore-MIT Alliance Programme Microelectronics Centre DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films. 2013-06-20T02:50:56Z 2019-12-06T19:43:31Z 2013-06-20T02:50:56Z 2019-12-06T19:43:31Z 2004 2004 Journal Article Li, Y. S., Lee, P. S., & Pey, K. L. (2004). Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate. Thin Solid Films, 462-463, 209-212. 0040-6090 https://hdl.handle.net/10356/97519 http://hdl.handle.net/10220/10503 10.1016/j.tsf.2004.05.025 en Thin solid films © 2004 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Li, Y. S. Lee, Pooi See Pey, Kin Leong Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| title | Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| title_full | Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| title_fullStr | Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| title_full_unstemmed | Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| title_short | Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| title_sort | effects of ti co and co ti systems on the germanosilicidation of poly si capped poly si1 xgex substrate |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/97519 http://hdl.handle.net/10220/10503 |
| work_keys_str_mv | AT liys effectsofticoandcotisystemsonthegermanosilicidationofpolysicappedpolysi1xgexsubstrate AT leepooisee effectsofticoandcotisystemsonthegermanosilicidationofpolysicappedpolysi1xgexsubstrate AT peykinleong effectsofticoandcotisystemsonthegermanosilicidationofpolysicappedpolysi1xgexsubstrate |