Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds...

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Bibliographic Details
Main Authors: Fernández-Rojas, Carlos J., Morral, Anna Fontcuberta i., Mata, Maria de la, Magen, Cesar, Gazquez, Jaume, Utama, Muhammad Iqbal Bakti, Heiss, Martin, Lopatin, Sergei, Furtmayr, Florian, Peng, Bo, Morante, Joan Ramon, Rurali, Riccardo, Eickhoff, Martin, Xiong, Qihua, Arbiol, Jordi
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97522
http://hdl.handle.net/10220/10703

Internet

https://hdl.handle.net/10356/97522
http://hdl.handle.net/10220/10703

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