Band gap effects of hexagonal boron nitride using oxygen plasma

Band gap effects of hexagonal boron nitride using oxygen plasma

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Opti...

Full description

Bibliographic Details
Main Authors: Singh, Ram Sevak, Tay, Roland Yingjie, Chow, Wai Leong, Tsang, Siu Hon, Mallick, Govind, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/97555
http://hdl.handle.net/10220/19603

Internet

https://hdl.handle.net/10356/97555
http://hdl.handle.net/10220/19603

Similar Items