Band gap effects of hexagonal boron nitride using oxygen plasma
Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Opti...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97555 http://hdl.handle.net/10220/19603 |
| _version_ | 1811694846602117120 |
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| author | Singh, Ram Sevak Tay, Roland Yingjie Chow, Wai Leong Tsang, Siu Hon Mallick, Govind Teo, Edwin Hang Tong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Singh, Ram Sevak Tay, Roland Yingjie Chow, Wai Leong Tsang, Siu Hon Mallick, Govind Teo, Edwin Hang Tong |
| author_sort | Singh, Ram Sevak |
| collection | NTU |
| description | Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing. |
| first_indexed | 2024-10-01T07:14:04Z |
| format | Journal Article |
| id | ntu-10356/97555 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:14:04Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/975552020-09-26T22:18:59Z Band gap effects of hexagonal boron nitride using oxygen plasma Singh, Ram Sevak Tay, Roland Yingjie Chow, Wai Leong Tsang, Siu Hon Mallick, Govind Teo, Edwin Hang Tong School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing. Published version 2014-06-10T03:03:52Z 2019-12-06T19:44:01Z 2014-06-10T03:03:52Z 2019-12-06T19:44:01Z 2014 2014 Journal Article Singh, R. S., Tay, R. Y., Chow, W. L., Tsang, S. H., Mallick, G., & Teo, E. H. T. (2014). Band gap effects of hexagonal boron nitride using oxygen plasma. Applied Physics Letters, 104(16), 163101-. https://hdl.handle.net/10356/97555 http://hdl.handle.net/10220/19603 10.1063/1.4872318 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4872318]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Singh, Ram Sevak Tay, Roland Yingjie Chow, Wai Leong Tsang, Siu Hon Mallick, Govind Teo, Edwin Hang Tong Band gap effects of hexagonal boron nitride using oxygen plasma |
| title | Band gap effects of hexagonal boron nitride using oxygen plasma |
| title_full | Band gap effects of hexagonal boron nitride using oxygen plasma |
| title_fullStr | Band gap effects of hexagonal boron nitride using oxygen plasma |
| title_full_unstemmed | Band gap effects of hexagonal boron nitride using oxygen plasma |
| title_short | Band gap effects of hexagonal boron nitride using oxygen plasma |
| title_sort | band gap effects of hexagonal boron nitride using oxygen plasma |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/97555 http://hdl.handle.net/10220/19603 |
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