Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature
We have patterned sub-1 nm dangling-bond (DB) lines on a H-terminated Si(100)-2 × 1 surface aligned with atomic precision at room temperature using a scanning tunneling microscope (STM) to controllably desorb hydrogen atoms from a H:Si(100) surface. In order to achieve continuous and aligned DB line...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97559 http://hdl.handle.net/10220/10644 |