Applications of finite element methods for reliability study of ULSI interconnections

Three main failure mechanisms of ULSI interconnects are the electromigration (EM), stress induced voiding (SIV) and low-k dielectric breakdown. Reliability tests for these mechanisms are too long to meet the development time requirement, and the underlying dominant mechanisms cannot be identified, r...

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Bibliographic Details
Main Authors: Tan, Cher Ming, Li, Wei, Gan, Zhenghao
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97730
http://hdl.handle.net/10220/11155