4H-SiC wafers studied by X-ray absorption and Raman scattering

4H-SiC wafers studied by X-ray absorption and Raman scattering

Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding...

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Bibliographic Details
Main Authors: Mendis, Suwan P., Xu, Qiang, Sun, Hua Yang, Chen, Cheng, Jang, Ling-Yun, E. Rusli, Tin, Chin Che, Qiu, Zhi Ren, Wu, Zhengyun, Liu, Chee Wee, Feng, Zhe Chuan
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:https://hdl.handle.net/10356/97866
http://hdl.handle.net/10220/11147

Internet

https://hdl.handle.net/10356/97866
http://hdl.handle.net/10220/11147

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