4H-SiC wafers studied by X-ray absorption and Raman scattering
Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding...
| Main Authors: | , , , , , , , , , , |
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| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147 |
| _version_ | 1811681655987896320 |
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| author | Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan |
| author_sort | Mendis, Suwan P. |
| collection | NTU |
| description | Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies. |
| first_indexed | 2024-10-01T03:44:24Z |
| format | Conference Paper |
| id | ntu-10356/97866 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:44:24Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/978662020-03-07T13:24:48Z 4H-SiC wafers studied by X-ray absorption and Raman scattering Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan School of Electrical and Electronic Engineering Silicon Carbide and Related Materials (2011) DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies. 2013-07-10T09:05:01Z 2019-12-06T19:47:29Z 2013-07-10T09:05:01Z 2019-12-06T19:47:29Z 2012 2012 Conference Paper https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147 10.4028/www.scientific.net/MSF.717-720.509 en © 2012 Trans Tech Publications, Switzerland. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan 4H-SiC wafers studied by X-ray absorption and Raman scattering |
| title | 4H-SiC wafers studied by X-ray absorption and Raman scattering |
| title_full | 4H-SiC wafers studied by X-ray absorption and Raman scattering |
| title_fullStr | 4H-SiC wafers studied by X-ray absorption and Raman scattering |
| title_full_unstemmed | 4H-SiC wafers studied by X-ray absorption and Raman scattering |
| title_short | 4H-SiC wafers studied by X-ray absorption and Raman scattering |
| title_sort | 4h sic wafers studied by x ray absorption and raman scattering |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials |
| url | https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147 |
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