Electromigration reliability of interconnections in RF low noise amplifier circuit

With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D sim...

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Bibliographic Details
Main Authors: He, Feifei, Tan, Cher Ming
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97926
http://hdl.handle.net/10220/11218