Electromigration reliability of interconnections in RF low noise amplifier circuit
With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D sim...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97926 http://hdl.handle.net/10220/11218 |
| _version_ | 1811686726264946688 |
|---|---|
| author | He, Feifei Tan, Cher Ming |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering He, Feifei Tan, Cher Ming |
| author_sort | He, Feifei |
| collection | NTU |
| description | With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D simulators is limited as the actual physical implementation of the circuit in a wafer is indeed 3D in nature, and is much more complicated than 2D. In this paper, we construct a complete 3D circuit model of a RF low noise amplifier (LNA) circuit, including both the intra- and inter-block interconnects. Electric-thermal-structural simulations are performed and the modifications that help to enhance the EM reliability of the circuit are carried out based on the simulation results. |
| first_indexed | 2024-10-01T05:05:00Z |
| format | Journal Article |
| id | ntu-10356/97926 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:05:00Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/979262020-03-07T14:02:46Z Electromigration reliability of interconnections in RF low noise amplifier circuit He, Feifei Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D simulators is limited as the actual physical implementation of the circuit in a wafer is indeed 3D in nature, and is much more complicated than 2D. In this paper, we construct a complete 3D circuit model of a RF low noise amplifier (LNA) circuit, including both the intra- and inter-block interconnects. Electric-thermal-structural simulations are performed and the modifications that help to enhance the EM reliability of the circuit are carried out based on the simulation results. 2013-07-11T07:06:16Z 2019-12-06T19:48:25Z 2013-07-11T07:06:16Z 2019-12-06T19:48:25Z 2011 2011 Journal Article https://hdl.handle.net/10356/97926 http://hdl.handle.net/10220/11218 10.1016/j.microrel.2011.09.033 en Microelectronics reliability © 2011 Elsevier Ltd. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering He, Feifei Tan, Cher Ming Electromigration reliability of interconnections in RF low noise amplifier circuit |
| title | Electromigration reliability of interconnections in RF low noise amplifier circuit |
| title_full | Electromigration reliability of interconnections in RF low noise amplifier circuit |
| title_fullStr | Electromigration reliability of interconnections in RF low noise amplifier circuit |
| title_full_unstemmed | Electromigration reliability of interconnections in RF low noise amplifier circuit |
| title_short | Electromigration reliability of interconnections in RF low noise amplifier circuit |
| title_sort | electromigration reliability of interconnections in rf low noise amplifier circuit |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/97926 http://hdl.handle.net/10220/11218 |
| work_keys_str_mv | AT hefeifei electromigrationreliabilityofinterconnectionsinrflownoiseamplifiercircuit AT tancherming electromigrationreliabilityofinterconnectionsinrflownoiseamplifiercircuit |