Novel heterogeneous integration technology of III-V layers and InGaAs FinFETs to silicon
Heterogeneous integration of III–V compound semiconductors to Si substrates is regarded as a necessary step for advancing high-speed electronics and hybrid optoelectronic systems for data processing and communications, and is extensively being pursued by the semiconductor industry. Here, an innovati...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98217 http://hdl.handle.net/10220/19623 |