Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM

Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM

The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielect...

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Bibliographic Details
Main Authors: Shubhakar, K., Pey, Kin Leong, Bosman, Michel, Thamankar, R., Kushvaha, S. S., Loke, Y. C., Wang, Z. R., Raghavan, Nagarajan, Wu, X., O'Shea, S. J.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98285
http://hdl.handle.net/10220/12309

Internet

https://hdl.handle.net/10356/98285
http://hdl.handle.net/10220/12309

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