Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM
The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielect...
| Main Authors: | , , , , , , , , , |
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| Format: | Conference Paper |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/98285 http://hdl.handle.net/10220/12309 |
| _version_ | 1811684674297135104 |
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| author | Shubhakar, K. Pey, Kin Leong Bosman, Michel Thamankar, R. Kushvaha, S. S. Loke, Y. C. Wang, Z. R. Raghavan, Nagarajan Wu, X. O'Shea, S. J. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Shubhakar, K. Pey, Kin Leong Bosman, Michel Thamankar, R. Kushvaha, S. S. Loke, Y. C. Wang, Z. R. Raghavan, Nagarajan Wu, X. O'Shea, S. J. |
| author_sort | Shubhakar, K. |
| collection | NTU |
| description | The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy. The analysis of the degradation and breakdown phenomenon has been performed from a macroscopic (device) level to a localized nanometer scale BD location. A new technique is adopted to induce the degradation and BD of the HfO2/SiOx dielectric stacks locally using a combined STM/scanning electron microscopy nano-probing system. The BD locations were identified on blanket wafers and gate electrode area of the dielectric, and the sample containing these regions was prepared using focused ion beam for the physical analysis using TEM. This method of analysis is very useful in studying the nature of the BD events in dielectrics with and without the gate electrode, elucidating the role of the gate electrode in dielectric BD events. |
| first_indexed | 2024-10-01T04:32:23Z |
| format | Conference Paper |
| id | ntu-10356/98285 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:32:23Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/982852020-03-07T13:24:48Z Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM Shubhakar, K. Pey, Kin Leong Bosman, Michel Thamankar, R. Kushvaha, S. S. Loke, Y. C. Wang, Z. R. Raghavan, Nagarajan Wu, X. O'Shea, S. J. School of Electrical and Electronic Engineering IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore) DRNTU::Engineering::Electrical and electronic engineering The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy. The analysis of the degradation and breakdown phenomenon has been performed from a macroscopic (device) level to a localized nanometer scale BD location. A new technique is adopted to induce the degradation and BD of the HfO2/SiOx dielectric stacks locally using a combined STM/scanning electron microscopy nano-probing system. The BD locations were identified on blanket wafers and gate electrode area of the dielectric, and the sample containing these regions was prepared using focused ion beam for the physical analysis using TEM. This method of analysis is very useful in studying the nature of the BD events in dielectrics with and without the gate electrode, elucidating the role of the gate electrode in dielectric BD events. 2013-07-25T08:30:21Z 2019-12-06T19:53:11Z 2013-07-25T08:30:21Z 2019-12-06T19:53:11Z 2012 2012 Conference Paper Shubhakar, K., Pey, K. L., Bosman, M., Thamankar, R., Kushvaha, S. S., Loke, Y. C., et al. (2012). Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. https://hdl.handle.net/10356/98285 http://hdl.handle.net/10220/12309 10.1109/IPFA.2012.6306264 en © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Shubhakar, K. Pey, Kin Leong Bosman, Michel Thamankar, R. Kushvaha, S. S. Loke, Y. C. Wang, Z. R. Raghavan, Nagarajan Wu, X. O'Shea, S. J. Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM |
| title | Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM |
| title_full | Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM |
| title_fullStr | Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM |
| title_full_unstemmed | Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM |
| title_short | Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM |
| title_sort | nanoscale physical analysis of localized breakdown events in hfo2 siox dielectric stacks a correlation study of stm induced bd with c afm and tem |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98285 http://hdl.handle.net/10220/12309 |
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