AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process

This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an...

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Bibliographic Details
Main Authors:	Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
Other Authors:	School of Electrical and Electronic Engineering
Format:	Journal Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/98329 http://hdl.handle.net/10220/17291

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https://hdl.handle.net/10356/98329
http://hdl.handle.net/10220/17291

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process

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