Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current densit...

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Bibliographic Details
Main Authors: Ye, G., Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Bryan, Maung Ye Kyaw Thu, Foo, Siew Chuen
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98351
http://hdl.handle.net/10220/18429

Internet

https://hdl.handle.net/10356/98351
http://hdl.handle.net/10220/18429

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