Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current densit...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/98351 http://hdl.handle.net/10220/18429 |
| _version_ | 1826128886664003584 |
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| author | Ye, G. Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Hofstetter, R. Li, Y. Anand, M. J. Ang, K. S. Bryan, Maung Ye Kyaw Thu Foo, Siew Chuen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ye, G. Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Hofstetter, R. Li, Y. Anand, M. J. Ang, K. S. Bryan, Maung Ye Kyaw Thu Foo, Siew Chuen |
| author_sort | Ye, G. |
| collection | NTU |
| description | In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (I dmax) with high peak transconductance (g mmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from −0.29 eV to −0.36 eV, low interface trap state density evaluated by AC conductance and “Hi-Lo frequency” methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer. |
| first_indexed | 2024-10-01T07:31:52Z |
| format | Journal Article |
| id | ntu-10356/98351 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:31:52Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/983512020-03-07T14:00:29Z Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon Ye, G. Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Hofstetter, R. Li, Y. Anand, M. J. Ang, K. S. Bryan, Maung Ye Kyaw Thu Foo, Siew Chuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (I dmax) with high peak transconductance (g mmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from −0.29 eV to −0.36 eV, low interface trap state density evaluated by AC conductance and “Hi-Lo frequency” methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer. Published version 2014-01-10T03:02:30Z 2019-12-06T19:53:56Z 2014-01-10T03:02:30Z 2019-12-06T19:53:56Z 2013 2013 Journal Article Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Hofstetter, R., Li, Y., et al. (2013). Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon. Applied physics letters, 103(14), 142109-. 0003-6951 https://hdl.handle.net/10356/98351 http://hdl.handle.net/10220/18429 10.1063/1.4824445 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4824445]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ye, G. Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Hofstetter, R. Li, Y. Anand, M. J. Ang, K. S. Bryan, Maung Ye Kyaw Thu Foo, Siew Chuen Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| title | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| title_full | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| title_fullStr | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| title_full_unstemmed | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| title_short | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| title_sort | atomic layer deposition of zro2 as gate dielectrics for algan gan metal insulator semiconductor high electron mobility transistors on silicon |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98351 http://hdl.handle.net/10220/18429 |
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