Crystalline silicon surface passivation by intrinsic silicon thin films deposited by low-frequency inductively coupled plasma
Amorphous and microcrystal hydrogenated intrinsic silicon (a-Si:H/μc-Si:H) thin films with good silicon surface passivation effect were deposited using a precursor gases of silane and hydrogen, which were discharged by low frequency inductively coupled high density plasma source. With regard to sili...
| Principais autores: | , , , , , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2013
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/98383 http://hdl.handle.net/10220/12073 |