A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials...

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Dades bibliogràfiques
Autors principals: Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.
Altres autors: School of Electrical and Electronic Engineering
Format: Journal Article
Idioma:English
Publicat: 2013
Matèries:
DRNTU::Engineering::Electrical and electronic engineering
Accés en línia:https://hdl.handle.net/10356/98464
http://hdl.handle.net/10220/11349

Internet

https://hdl.handle.net/10356/98464
http://hdl.handle.net/10220/11349

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