A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials...

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Bibliographic Details
Main Authors: Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98464
http://hdl.handle.net/10220/11349

Internet

https://hdl.handle.net/10356/98464
http://hdl.handle.net/10220/11349

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