A self-rectifying HfOx-based unipolar RRAM with NiSi electrode
In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials...
Autors principals: | , , , , , , , , , , |
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Altres autors: | |
Format: | Journal Article |
Idioma: | English |
Publicat: |
2013
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Matèries: | |
Accés en línia: | https://hdl.handle.net/10356/98464 http://hdl.handle.net/10220/11349 |