A self-rectifying HfOx-based unipolar RRAM with NiSi electrode
In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98464 http://hdl.handle.net/10220/11349 |
| _version_ | 1811680046918664192 |
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| author | Tran, Xuan Anh Gao, Bin Yu, Hongyu Zhu, W. G. Kang, J. F. Liu, W. J. Fang, Z. Wang, Z. R. Yeo, Y. C. Nguyen, B. Y. Li, M. F. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tran, Xuan Anh Gao, Bin Yu, Hongyu Zhu, W. G. Kang, J. F. Liu, W. J. Fang, Z. Wang, Z. R. Yeo, Y. C. Nguyen, B. Y. Li, M. F. |
| author_sort | Tran, Xuan Anh |
| collection | NTU |
| description | In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition). |
| first_indexed | 2024-10-01T03:18:50Z |
| format | Journal Article |
| id | ntu-10356/98464 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:18:50Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/984642020-03-07T14:00:30Z A self-rectifying HfOx-based unipolar RRAM with NiSi electrode Tran, Xuan Anh Gao, Bin Yu, Hongyu Zhu, W. G. Kang, J. F. Liu, W. J. Fang, Z. Wang, Z. R. Yeo, Y. C. Nguyen, B. Y. Li, M. F. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition). 2013-07-15T01:56:12Z 2019-12-06T19:55:29Z 2013-07-15T01:56:12Z 2019-12-06T19:55:29Z 2012 2012 Journal Article https://hdl.handle.net/10356/98464 http://hdl.handle.net/10220/11349 10.1109/LED.2011.2181971 en IEEE electron device letters © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Tran, Xuan Anh Gao, Bin Yu, Hongyu Zhu, W. G. Kang, J. F. Liu, W. J. Fang, Z. Wang, Z. R. Yeo, Y. C. Nguyen, B. Y. Li, M. F. A self-rectifying HfOx-based unipolar RRAM with NiSi electrode |
| title | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode |
| title_full | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode |
| title_fullStr | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode |
| title_full_unstemmed | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode |
| title_short | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode |
| title_sort | self rectifying hfox based unipolar rram with nisi electrode |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98464 http://hdl.handle.net/10220/11349 |
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