Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors
The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition studies of the hysteresis behavior and capacitance-voltage characteristics on si...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98488 http://hdl.handle.net/10220/8063 |