Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications
Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap,...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98502 http://hdl.handle.net/10220/12369 |