Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications
Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap,...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98502 http://hdl.handle.net/10220/12369 |
| Summary: | Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiOx : H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s−1. The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiOx : H-based passivation and emitter layers. |
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