Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications
Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap,...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98502 http://hdl.handle.net/10220/12369 |
| _version_ | 1811688564674527232 |
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| author | Wei, D. Y. Zhou, H. P. Xu, S. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, M. |
| author2 | Institute of Advanced Studies |
| author_facet | Institute of Advanced Studies Wei, D. Y. Zhou, H. P. Xu, S. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, M. |
| author_sort | Wei, D. Y. |
| collection | NTU |
| description | Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiOx : H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s−1. The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiOx : H-based passivation and emitter layers. |
| first_indexed | 2024-10-01T05:34:13Z |
| format | Journal Article |
| id | ntu-10356/98502 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:34:13Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/985022020-03-07T12:48:42Z Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications Wei, D. Y. Zhou, H. P. Xu, S. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, M. Institute of Advanced Studies Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiOx : H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s−1. The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiOx : H-based passivation and emitter layers. 2013-07-26T04:21:10Z 2019-12-06T19:56:14Z 2013-07-26T04:21:10Z 2019-12-06T19:56:14Z 2012 2012 Journal Article Zhou, H. P., Wei, D. Y., Xu, S., Xiao, S. Q., Xu, L. X., Huang, S. Y., et al. (2012). Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications. Journal of Physics D: Applied Physics, 45(39). https://hdl.handle.net/10356/98502 http://hdl.handle.net/10220/12369 10.1088/0022-3727/45/39/395401 en Journal of physics D: applied physics © 2012 IOP Publishing Ltd. |
| spellingShingle | Wei, D. Y. Zhou, H. P. Xu, S. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, M. Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications |
| title | Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications |
| title_full | Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications |
| title_fullStr | Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications |
| title_full_unstemmed | Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications |
| title_short | Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications |
| title_sort | si surface passivation by siox h films deposited by a low frequency icp for solar cell applications |
| url | https://hdl.handle.net/10356/98502 http://hdl.handle.net/10220/12369 |
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