Positive bias-induced Vth instability in graphene field effect transistors

Positive bias-induced Vth instability in graphene field effect transistors

In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. The ΔVth of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, i...

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Bibliographic Details
Main Authors: Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98513
http://hdl.handle.net/10220/11342

Internet

https://hdl.handle.net/10356/98513
http://hdl.handle.net/10220/11342

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