Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon

Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon

Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to...

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书目详细资料
Main Authors: Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Manoj Kumar, Chandra Mohan, Ang, Kian Siong, Anand, Mulagumoottil Jesudas, Wang, Hong, Hofstetter, René, Ye, Gang
其他作者: School of Electrical and Electronic Engineering
格式: Journal Article
语言:English
出版: 2015
主题:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在线阅读:https://hdl.handle.net/10356/98548
http://hdl.handle.net/10220/25659

因特网

https://hdl.handle.net/10356/98548
http://hdl.handle.net/10220/25659

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