Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/98548 http://hdl.handle.net/10220/25659 |
| _version_ | 1811696048235610112 |
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| author | Li, Yang Ng, Geok Ing Arulkumaran, Subramaniam Manoj Kumar, Chandra Mohan Ang, Kian Siong Anand, Mulagumoottil Jesudas Wang, Hong Hofstetter, René Ye, Gang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Yang Ng, Geok Ing Arulkumaran, Subramaniam Manoj Kumar, Chandra Mohan Ang, Kian Siong Anand, Mulagumoottil Jesudas Wang, Hong Hofstetter, René Ye, Gang |
| author_sort | Li, Yang |
| collection | NTU |
| description | Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 °C and slightly increases from 875 to 900 °C. The sample annealed at 850 °C exhibited the lowest Rc of 0.22±0.03 Ω·mm [specific contact resistivity, ρc=(0.78±0.22)×10-6 Ω·cm2] with a smooth surface morphology (RMS roughness ~5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface. |
| first_indexed | 2024-10-01T07:33:10Z |
| format | Journal Article |
| id | ntu-10356/98548 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:33:10Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/985482020-03-07T12:47:16Z Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon Li, Yang Ng, Geok Ing Arulkumaran, Subramaniam Manoj Kumar, Chandra Mohan Ang, Kian Siong Anand, Mulagumoottil Jesudas Wang, Hong Hofstetter, René Ye, Gang School of Electrical and Electronic Engineering Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 °C and slightly increases from 875 to 900 °C. The sample annealed at 850 °C exhibited the lowest Rc of 0.22±0.03 Ω·mm [specific contact resistivity, ρc=(0.78±0.22)×10-6 Ω·cm2] with a smooth surface morphology (RMS roughness ~5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface. 2015-05-25T02:59:20Z 2019-12-06T19:56:42Z 2015-05-25T02:59:20Z 2019-12-06T19:56:42Z 2013 2013 Journal Article Li, Y., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ang, K. S., Anand, M. J., et al. (2013). Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon. Applied physics express, 6(11), 116501-. https://hdl.handle.net/10356/98548 http://hdl.handle.net/10220/25659 10.7567/APEX.6.116501 en Applied physics express © 2013 The Japan Society of Applied Physics. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Li, Yang Ng, Geok Ing Arulkumaran, Subramaniam Manoj Kumar, Chandra Mohan Ang, Kian Siong Anand, Mulagumoottil Jesudas Wang, Hong Hofstetter, René Ye, Gang Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon |
| title | Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon |
| title_full | Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon |
| title_fullStr | Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon |
| title_full_unstemmed | Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon |
| title_short | Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon |
| title_sort | low contact resistance non gold ta si ti al ni ta ohmic contacts on undoped algan gan high electron mobility transistors grown on silicon |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/98548 http://hdl.handle.net/10220/25659 |
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