Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon

Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon

The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal-oxide-semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate the effect of temperature on the Ge...

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Bibliographic Details
Main Authors: Fitzgerald, Eugene A., Tan, Yew Heng, Yew, Kwang Sing, Lee, Kwang Hong, Chang, Yao-Jen, Chen, Kuan-Neng, Ang, Diing Shenp, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98577
http://hdl.handle.net/10220/17265

Internet

https://hdl.handle.net/10356/98577
http://hdl.handle.net/10220/17265

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