The 3-D stacking bipolar RRAM for high density

For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Co...

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Bibliographic Details
Main Authors: Chen, Yi-Chung, Li, Helen Hai, Zhang, Wei, Pino, Robinson E.
Other Authors: School of Computer Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98692
http://hdl.handle.net/10220/16470