The 3-D stacking bipolar RRAM for high density

For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Co...

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Bibliografiska uppgifter
Huvudupphovsmän: Chen, Yi-Chung, Li, Helen Hai, Zhang, Wei, Pino, Robinson E.
Övriga upphovsmän: School of Computer Engineering
Materialtyp: Journal Article
Språk:English
Publicerad: 2013
Ämnen:
Länkar:https://hdl.handle.net/10356/98692
http://hdl.handle.net/10220/16470