Flexible write-once–read-many-times memory device based on a nickel oxide thin film

Flexible write-once–read-many-times memory device based on a nickel oxide thin film

A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) w...

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Bibliographic Details
Main Authors: Yu, Q., Liu, Y., Liu, Z., Yu, Y. F., Lei, H. W., Zhu, J., Chen, Tupei, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98819
http://hdl.handle.net/10220/13467

Internet

https://hdl.handle.net/10356/98819
http://hdl.handle.net/10220/13467

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