Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation
An effective suppression of drain current collapse was realized in both Enhancement (E)-mode and Depletion (D)-mode AlGaN/GaN High-electron-mobility-transistors (HEMTs) on 4-inch Silicon (111) by ammonium sulfide [(NH4)2Sx] passivation. The current collapse was studied using the pulsed current-volta...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98937 http://hdl.handle.net/10220/13454 |