The shuttle nanoelectromechanical nonvolatile memory
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on...
| Autori principali: | , , , , |
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| Altri autori: | |
| Natura: | Journal Article |
| Lingua: | English |
| Pubblicazione: |
2013
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| Soggetti: | |
| Accesso online: | https://hdl.handle.net/10356/99090 http://hdl.handle.net/10220/13480 |