The shuttle nanoelectromechanical nonvolatile memory
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on...
| Principais autores: | , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2013
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/99090 http://hdl.handle.net/10220/13480 |