Growth of tapered SiC nanowires on flexible carbon fabric : toward field emission applications
Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric by a chemical vapor deposition process. The products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscop...
| Main Authors: | , , , , , , |
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| Drugi avtorji: | |
| Format: | Journal Article |
| Jezik: | English |
| Izdano: |
2013
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| Online dostop: | https://hdl.handle.net/10356/99111 http://hdl.handle.net/10220/17328 |