Maximization of SRAM energy efficiency utilizing MTCMOS technology
Higher-Vth devices in the cross-coupled latches and the write access transistors, and lower-Vth devices in the read ports are preferred for reducing leakage current without sacrificing performance. However, at ultra-low supply voltage levels, higher-Vth devices can retard or nullify energy efficienc...
| Asıl Yazarlar: | , , |
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| Materyal Türü: | Conference Paper |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
2013
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| Online Erişim: | https://hdl.handle.net/10356/99114 http://hdl.handle.net/10220/12584 |