Charge injection at carbon nanotube-SiO2 interface
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99208 http://hdl.handle.net/10220/6859 |