Are interface state generation and positive oxide charge trapping under negative-bias temperature stressing correlated or coupled?
Studies have suggested that interface state generation under negative-bias temperature (NBT) stress results in positive oxide charge trapping. The latter is ascribed to the trapping of hydrogen species, from Si-H bond dissociation, in the oxide bulk. In this paper, we present evidence from dynamic N...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99239 http://hdl.handle.net/10220/13447 |