Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy

Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy

Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole...

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Bibliographic Details
Main Authors: Bosman, Michel, Ong, Beng Sheng, Chiam, Sing Yang, Pey, Kin Leong, Qin, Hailang, Liu, Zhiqiang, Troadec, Cedric, Goh, Johnson Kuan Eng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99331
http://hdl.handle.net/10220/17845

Internet

https://hdl.handle.net/10356/99331
http://hdl.handle.net/10220/17845

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