Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy
Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/99331 http://hdl.handle.net/10220/17845 |
| _version_ | 1826121121747959808 |
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| author | Bosman, Michel Ong, Beng Sheng Chiam, Sing Yang Pey, Kin Leong Qin, Hailang Liu, Zhiqiang Troadec, Cedric Goh, Johnson Kuan Eng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Bosman, Michel Ong, Beng Sheng Chiam, Sing Yang Pey, Kin Leong Qin, Hailang Liu, Zhiqiang Troadec, Cedric Goh, Johnson Kuan Eng |
| author_sort | Bosman, Michel |
| collection | NTU |
| description | Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole pairs excited by photons emitted during scanning tunneling microscopy(STM), and the second threshold at ∼3.55 eV, which is attributed to the Au/oxidized-GaAs barrier. Our results demonstrate that the two-threshold behavior observed in BEES studies on metal/oxide samples is amenable to a physical model comprising of STMphotocurrent and a metal/oxide interface barrier. |
| first_indexed | 2024-10-01T05:27:14Z |
| format | Journal Article |
| id | ntu-10356/99331 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:27:14Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/993312020-03-07T14:02:39Z Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy Bosman, Michel Ong, Beng Sheng Chiam, Sing Yang Pey, Kin Leong Qin, Hailang Liu, Zhiqiang Troadec, Cedric Goh, Johnson Kuan Eng School of Electrical and Electronic Engineering Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole pairs excited by photons emitted during scanning tunneling microscopy(STM), and the second threshold at ∼3.55 eV, which is attributed to the Au/oxidized-GaAs barrier. Our results demonstrate that the two-threshold behavior observed in BEES studies on metal/oxide samples is amenable to a physical model comprising of STMphotocurrent and a metal/oxide interface barrier. Published version 2013-11-25T07:58:26Z 2019-12-06T20:06:06Z 2013-11-25T07:58:26Z 2019-12-06T20:06:06Z 2012 2012 Journal Article Qin, H., Liu, Z., Troadec, C., Goh, J. K. E., Bosman, M., Ong, B. S., et al. (2012). Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 30(1), 011805-. 2166-2746 https://hdl.handle.net/10356/99331 http://hdl.handle.net/10220/17845 10.1116/1.3675606 en Journal of vacuum science & technology B: microelectronics and nanometer structures © 2012 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.3675606]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Bosman, Michel Ong, Beng Sheng Chiam, Sing Yang Pey, Kin Leong Qin, Hailang Liu, Zhiqiang Troadec, Cedric Goh, Johnson Kuan Eng Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy |
| title | Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy |
| title_full | Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy |
| title_fullStr | Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy |
| title_full_unstemmed | Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy |
| title_short | Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy |
| title_sort | barrier height determination of au oxidized gaas n gaas using ballistic electron emission spectroscopy |
| url | https://hdl.handle.net/10356/99331 http://hdl.handle.net/10220/17845 |
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