Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy
Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole...
| Main Authors: | , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/99331 http://hdl.handle.net/10220/17845 |